2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[B-1-01 (Invited)]Materials Development and Interfacial Engineering for Emerging Ferroelectric Memories
Geun Hyeong Park1, Se Hyun Kim1, 〇Min Hyuk Park1(1. Seoul National Univ. (Korea))
The discovery of ferroelectric properties in (Hf,Zr)O2 (HZO) thin films revitalized research into memory technologies like FeRAM and FeFET. While traditional ferroelectrics enabled FeRAM, their limited application contrasts with compatibility of HZO with mainstream CMOS technology, suggesting potential advances in memory technology. This exploration highlights the critical influence of material properties on device performance, including the role of intrinsic factors like doping and strain. Besides, recent our experiments demonstrating advancements like low voltage operations in FeRAM and enhancement of ferroelectricity on Si by adopting ultra-thin TiO2 IL are introduced.