[B-1] Ferroelectric Memory Materials

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)Invited

[B-1-01 (Invited)] Materials Development and Interfacial Engineering for Emerging Ferroelectric Memories

Geun Hyeong Park¹, Se Hyun Kim¹, 〇Min Hyuk Park¹ (1. Seoul National Univ. (Korea))

DOI:

https://doi.org/10.7567/SSDM.2024.B-1-01

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