International Conference on Solid State Devices and Materials

The imprint characteristic of Hf_0.5Zr_0.5O₂ metal-ferroelectric-metal (MFM) capacitors are systematically examined with varied holding electric field (E_h), write cycles, and thickness to clarify the origin of imprint phenomena. The imprint accelerated when the holding field E_h and polarization have the same direction suggests that the imprint originates from charge trapping at the interfaces. Imprint is weakened after wake-up cycling, attributable to the redistribution of oxygen vacancies near the interfaces. This study suggests that controlling the interfacial quality is an effective strategy to suppress the imprint.