[B-1] Ferroelectric Memory Materials

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[B-1-02] Understanding of Imprint Behavior of Ferroelectric Hf_0.5Zr_0.5O₂ thin Film: Role of Charge Injection and Field Cycling

〇Zhenhong Liu¹, Zuochen Cai¹, Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1. The University of Tokyo (Japan))

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