2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[B-1-03]New insight of ferroelectric Hf0.5Zr0.5O2 properties under cryogenic
temperatures in integrated ferroelectric capacitors
〇Flavien Berthaud1, Liam Hosier1, Niccolo Castellani1, Jean Rottner1, Valentina Méli1, Laurent Grenouillet1, Julie Laguerre1, Catherine Carabasse1, Jean Coignus1, Mikaël Cassé1, Simon Martin1(1. Univ. Grenoble Alpes, CEA, Leti F-38000 Grenoble (France))
Ferroelectric memories showed promising features
to support low temperature electronics. In this context,
this work investigates the ferroelectric properties modification
under cryogenic temperature demonstrating a reduction of the
field-induced t-phase to o-phase transition at pristine state and a reduction of oxygen vacancies and/or charge redistribution through cycling that inhibits wake-up effect. Despite an overall polarization drop, low temperature operation mitigates wake-up and fatigue phenomena stabilizing FeCap performances.
to support low temperature electronics. In this context,
this work investigates the ferroelectric properties modification
under cryogenic temperature demonstrating a reduction of the
field-induced t-phase to o-phase transition at pristine state and a reduction of oxygen vacancies and/or charge redistribution through cycling that inhibits wake-up effect. Despite an overall polarization drop, low temperature operation mitigates wake-up and fatigue phenomena stabilizing FeCap performances.