2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[B-1-04]Universal Temperature-Strain Phase Diagram of HfxZr1-xO2 Films
Towards to Ferroelectric Phase Engineering
Tianning Cui1, Zhipeng Xue1, Danyang Chen1, Yuyan Chen1, Jingquan Liu1, Mengwei Si1, 〇Xiuyan Li1(1. Shanghai Jiao Tong University (China))
In this work, by systematically characterizing the phase transition in situ in annealing of HZO films with various parameters using synchrotron-based 2D GIXRD technique, for the first time, we establish a universal temperature-strain phase diagram of HZO and propose a guideline of thermodynamic and kinetic controlling for optimization of ferroelectric (FE) phase formation.