International Conference on Solid State Devices and Materials

Recent advancements in artificial intelligence have underscored the limitations of traditional computing architectures, propelling the development of in-memory-computing (IMC) systems. This work discusses the feasibility of computing with ferroelectric field-effect transistors (FeFETs) in multi-level cell (MLC) operation in FeFET arrays. We specifically explore the programming and operational intricacies of MLC FeFETs and showcase an effective algorithm for achieving clear states. Through experimental validation, we demonstrate that our FeFET-based MLC design not only maintains crossbar density but also ensures high computational accuracy, addressing variability challenges traditionally associated with such devices.