[B-3] Ferroelectric Devices

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)Invited

[B-3-01 (Invited)] HfO₂-based Ferroelectric Capacitors for Non-Volatile Memory:
Going from Single Devices to Memory Arrays

〇Ruben Alcala¹, Roberto Guido¹, Pramoda Vishnumurthy¹, Alfred Kersch², Thomas Mikolajick¹, Uwe Schroeder¹ (1. NaMLab (Germany), 2. Univ. of Applied Sciences (Germany))

DOI:

https://doi.org/10.7567/SSDM.2024.B-3-01

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