2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[B-3-01 (Invited)]HfO2-based Ferroelectric Capacitors for Non-Volatile Memory:
Going from Single Devices to Memory Arrays
〇Ruben Alcala1, Roberto Guido1, Pramoda Vishnumurthy1, Alfred Kersch2, Thomas Mikolajick1, Uwe Schroeder1(1. NaMLab (Germany), 2. Univ. of Applied Sciences (Germany))
Hafnium oxide-based ferroelectric random access
memory presents a robust, well-understood option as the
demand for novel memory technologies to meet the demands
of new computational processing capabilities
grows. Here, the main limitations regarding the reliability
of this technology, focusing on electric field cycling and
retention, are addressed, and the application of the current
state-of-the-art technology is discussed. From this, it
is clear that potential material improvement is still possible,
but currently, with certain operational workarounds,
this technology already proves to be at a mature stage.
memory presents a robust, well-understood option as the
demand for novel memory technologies to meet the demands
of new computational processing capabilities
grows. Here, the main limitations regarding the reliability
of this technology, focusing on electric field cycling and
retention, are addressed, and the application of the current
state-of-the-art technology is discussed. From this, it
is clear that potential material improvement is still possible,
but currently, with certain operational workarounds,
this technology already proves to be at a mature stage.