archive_header_en_20251212170150691.png

PmlE68RDnTBu0QmluaBh.ico

web_header.png

icon_20251212182712260.png

Change account information such as the email address and password on the account setting screen common to Confit.

Login required to view

Password required to view

Presentation Information

Session Details

To browse or post comments, you must log in.

You cannot post comments as it is outside the comment posting period.

This comment has been deleted. You cannot reply to this comment.

Program Type

Area

Plenary / Invited

Sessions

Profile management

Bookmark

Announcements

Search presentations

Download PDF for print

Timetable

Unipolar Polarization Switching and High-endurance Operation of HZO/Si Anti-ferroelectric FETs

We investigate the anti-ferroelectric-like (AFE) behavior of Hf1-xZrxO2 (HZO)/Si FETs and its potential for high-endurance performance. The counterclockwise hysteresis in Id-Vg characteristics under unipolar bias operation is successfully demonstrated through half-loop polarization in AFeFET. The non-volatile program/erase operation can be realized under unipolar operation owing to built-in bias. Based on this finding, we demonstrate high-endurance AFeFET using unipolar bias operation.

Ferroelectric Devices

International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

[B-3-02]Unipolar Polarization Switching and High-endurance Operation of HZO/Si Anti-ferroelectric FETs