International Conference on Solid State Devices and Materials

This study experimentally investigated La-doped ZrO2 (ZLO) antiferroelectric (AFE) capacitors. The result shows that when the ALD cycle ratio of Zr to La reached 40:1, ZLO exhibited optimal antiferroelectrici-ty. Furthermore, annealing experiments conducted on ZLO at various temperatures demonstrate that even without post-metallization annealing (PMA), it possesses remarkable antiferroelectric properties, which is highly advantageous for back-end-of-line (BEOL) processes, simplifying the fabrication process and potentially re-ducing the cost. More excitingly, endurance testing shows that ZLO demonstrated superior reliability to traditional antiferroelectric devices. This discovery opens up new avenues for the practical application of antiferroelectric and offers promising prospects for their integration into advanced electronic devices.