[B-6-01 (Invited)] Metal Induced Lateral Crystallization (MILC) Techniques for Highly Scalable Vertical Si Channel in 3D Flash Memory | 2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

Sep 1 - Sep 4, 2024Arcrea HIMEJI

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2024 International Conference on Solid State Devices and Materials

Sep 1 - Sep 4, 2024Arcrea HIMEJI

[B-6-01 (Invited)]Metal Induced Lateral Crystallization (MILC) Techniques for Highly Scalable Vertical Si Channel in 3D Flash Memory

〇Noritaka Ishihara¹, Yusuke Shimada¹, Takamitsu Ochi¹, Satoshi Seto¹, Haruki Matsuo¹, Hiroki Yamashita¹, Sho Morita¹, Masafumi Ukishima¹, Yusuke Arayashiki¹, Suzuka Kajiwara¹, Katsuya Nishiyama¹, Akiyuki Murayama¹, Kikuko Sugimae¹, Shinji Mori¹, Yuta Saito¹, Takeshi Shundo¹, Aki Maeda¹, Hiroyuki Kamiya², Yasuhiro Uchiyama¹, Makoto Fujiwara¹, Fumiki Aiso¹, Katsuyuki Sekine¹, Norio Ohtani¹(1. Kioxia Corporation (Japan), 2. Western Digital Corporation (Japan))

https://doi.org/10.7567/SSDM.2024.B-6-01

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State-of-the-art Metal Induced Lateral Crystallization (MILC) techniques have been successfully demonstrated for 3D flash memory with over 300 word-line layers (WL). These techniques encompass Ni-assisted MILC to realize a fully single crystallized Si channel of 14μm and Ni gettering after MILC for cell reliability. Excellent cell array characteristics can be achieved, including over a 40% reduction in random telegraph noise (RTN) during read operations and a 10-fold increase in channel conductance, without any degradation of cell reliability.

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