[B-6] 3D NAND Flash Memory

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)Invited

[B-6-01 (Invited)] Metal Induced Lateral Crystallization (MILC) Techniques for Highly Scalable Vertical Si Channel in 3D Flash Memory

〇Noritaka Ishihara¹, Yusuke Shimada¹, Takamitsu Ochi¹, Satoshi Seto¹, Haruki Matsuo¹, Hiroki Yamashita¹, Sho Morita¹, Masafumi Ukishima¹, Yusuke Arayashiki¹, Suzuka Kajiwara¹, Katsuya Nishiyama¹, Akiyuki Murayama¹, Kikuko Sugimae¹, Shinji Mori¹, Yuta Saito¹, Takeshi Shundo¹, Aki Maeda¹, Hiroyuki Kamiya², Yasuhiro Uchiyama¹, Makoto Fujiwara¹, Fumiki Aiso¹, Katsuyuki Sekine¹, Norio Ohtani¹ (1. Kioxia Corporation (Japan), 2. Western Digital Corporation (Japan))

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