[C-1-01 (Invited)]Area Selective Deposition to Facilitate Integration
〇Christophe Vallee1, Anthony Valenti1, Nicolas Paul Maldonado1, Van Long Nguyen1, shivan Antar1, Gregory Denbeaux1, Carl Jr Ventrice1, Marceline Bonvalot2(1. University at Albany (United States of America), 2. Universite Grenoble Alpes (France))
The development of area selective deposition for the manufacturing of integrated circuits has allowed the semiconductor industry to produce complex device structuresat the nanometer scale. A brief overview of the different techniques for achieving area selective deposition will be given. This will be followed by examples of current applications where this technique is being used.
