[D-1] Ga2O3 Power Devices

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)Invited

[D-1-01 (Invited)] Pairing Ga₂O₃ with p-NiO produces robust power diodes for harsh environments

Hehe Gong1,2、Feng Zhou1、Ming Xiao2、Yuhao Zhang2、〇Jiandong Ye1 (1. Nanjing University (China)、2. Virginia Tech (United States of America))

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