International Conference on Solid State Devices and Materials

This work unveils the enabling edge termination for a robust, circuit-level avalanche in a UWBG NiO/Ga2O3 p-n heterojunction diode (HJD), and correlates the edge termination (ET) design with avalanche energy. Such ET combines a NiO junction termination extension (JTE) and a high-k oxide-based (BaTiO3) field plate. The ava-lanche voltage and current are enhanced from 761V/26A to 2135V/83A by lowering the p-type NiO doping in this high-k enhanced JTE. The achieved avalanche energy density (11.3 J/cm2) sets a new record in heterojunction devices and is comparable to the highest values reported in SiC and GaN homojunctions.