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High Power and High Frequency Diamond Field Effect Transistors

2 dimensional hole gas (2DHG) of hydrogen terminated (C-H) diamond surface has been applied for field effect transistors (FETs) operated in GHz. RF Power handling capability has been evaluated.

Diamond Devices

International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

[D-2-01 (Invited)]High Power and High Frequency Diamond Field Effect Transistors