[D-3] Si-related Devices

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[D-3-03] Proposal of 1.2kV thin wafer Semi-SuperJunction IGBT (SSJ-IGBT) surpassing Full SuperJunction IGBT

〇Masahiro Tanaka¹, Naoki Abe², Akio Nakagawa³ (1. Nihon Synopsys G.K. (Japan), 2. Nihon Synopsys G.K. (Japan), 3. Nakagawa Consulting Office, LLC. (Japan))

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