[D-3] Si-related Devices

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[D-3-03] Proposal of 1.2kV thin wafer Semi-SuperJunction IGBT (SSJ-IGBT) surpassing Full SuperJunction IGBT

〇Masahiro Tanaka¹, Naoki Abe², Akio Nakagawa³ (1. Nihon Synopsys G.K. (Japan), 2. Nihon Synopsys G.K. (Japan), 3. Nakagawa Consulting Office, LLC. (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.D-3-03

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