International Conference on Solid State Devices and Materials

Nitridation of SiO₂/SiC interfaces was investigated by means of physical and electrical analyses. Sub-nm-scale depth profiling of nitrogen atoms at NO-nitrided SiO₂/SiC interfaces was performed, and both positive and negative impacts of incorporating nitrogen on the electrical properties were discussed. We also conducted an extensive benchmarking of NO-nitrided MOS devices fabricated on basal and non-basal plane substrates in terms of interface properties and long-term reliability.