International Conference on Solid State Devices and Materials

Silicon carbide (SiC) bipolar devices such as insulated gate bipolar transistors (IGBTs) can achieve ultra-high blocking voltage above 6.5 kV with high current capability, suitable for power conversion systems utilized in smart grid and HVDC. This talk introduces power loss reduction in SiC IGBTs. The switching loss was reduced employing a thin drift layer, and the conduction loss was reduced by box cell layout and TED-MOS structure, both of which improve electron injection from the emitter.