International Conference on Solid State Devices and Materials

Phosphorus-doped silicon nanocrystals (Si-NCs)/amorphous silicon (a-Si) composite films were prepared by plasma enhanced chemical vapor deposition (PECVD) and post-annealing at annealing temperature (T_an)=1273 K. At room temperature the carrier concentration was 1.83 × 10²⁰ cm^-3, the Seebeck coefficient was -115 μV･K^-1, the electrical conductivity was 1.34 kS･m^-1 and the material power factor was 1.77 mW･m^-1･K^-2. The planar unileg TEGs using P-doped Si-NCs/a-Si composite films were fabricated on a quartz substrate. The fabricated TEGs showed ideal power-current curves and the maximum output power of 3.26 nW was obtained at ΔT=8 K.