2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[H-2-01 (Invited)]Photonic III-V semiconductor nanowires on Si toward wafer scale functionalization
〇Fumitaro Ishikawa1(1. Hokkaido Univ. (Japan))
Integrating III-V semiconductor nanowires (NWs) on silicon (Si) substrates enhances the optical functionalities of Si technology. For high-output applications like photovoltaics and photo-electrochemistry, volume and photoelectric conversion efficiency are crucial. We grew GaAs-related NWs using a self-catalyzed Ga-induced vapor-liquid-solid method, achieving bright and homogeneous photoluminescence on a 2-inch Si(111) substrate. The presence of dense NWs on the surface results in dark observation due to significant light absorption. The NWs exhibit uniform distribution over the substrate with a density of 5x107 cm-2. The samples with AlGaAs passivation shells exhibit photoluminescence intensity comparable to commercial GaAs substrates. Further functional enhancements include controlled crystal structure for stronger second harmonic generation, incorporating dilute nitrogen for lasers, bismuth for quantum structures, and oxidation for white light source and enrolled structural modifications, paving the way for large-volume and functional photoelectric conversion on Si platforms.