2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[K-2-01 (Invited)]High Mobility Thin film Transistors for Three Dimensional LSIsfabricated by ALD process
Takanori Takahashi1, 〇Yukiharu Uraoka1(1. Nara Institute of Science and Technology (Japan))
To realize complex three-dimensional large-scale integration (LSI), we fabricated high-mobility thin-film transistors using the atomic layer deposition (ALD) process. By appropriately incorporating Ga into In2O3 during the ALD process, we demonstrated thin-film transistors that simultaneously satisfy performance and reliability requirements.