International Conference on Solid State Devices and Materials

A thin polycrystalline-Ge (poly-Ge) film is required to fabricate junctionless poly-Ge TFTs with a high I_on/I_off ratio owing to the presence of a high hole concentration in the order of 10¹⁹ cm^-3. However, it is difficult to crystallize thin amorphous-Ge (a-Ge) less than 20 nm at low temperatures. We used metal induced crystallization with Cu to crystallize a thin a-Ge film at low temperatures. In addition, a planar double gate (DG) structure was applied to realize high performance TFTs. This report presents the performance of Cu-MIC planar DG poly-Ge TFTs.