International Conference on Solid State Devices and Materials

Three-level charge pumping (3L-CP) is a method for evaluating carrier capture and emission at interface traps. When applied to SiC MOSFETs, 3L-CP often reveals peculiar characteristics owing to near-interface oxide traps (NITs) with a long time constant. The CP current is calculated using the trap occupancy rates of interface traps and NITs to understand the phenomena and obtain the distribution of interface-trap and NIT densities.