[M-2] Characterization and Device Applications

4:15 PM - 4:45 PM JST(7:15 AM - 7:45 AM UTC)Invited

[M-2-01 (Invited)] Three-Level Charge Pumping Technique for SiC-MOS Interface Characterization

〇Hiroshi Yano¹ (1. Univ. of Tsukuba (Japan))

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