International Conference on Solid State Devices and Materials

With the advent of new materials and the increas-ing complexity of devices, there is a need to develop more advanced measurement and data analysis tech-niques. This talk first discusses the purpose of meas-urement and the need for metrology informatics using data science. Then, a case study of efficient data pro-cessing by machine learning in the analysis of ion-induced damage in GaN is presented. A case study of dislocation analysis in GaN using a combination of transmission electron microscopy and 3D atom probe tomography will also be presented. Finally, I explore the potential of multimodal analysis methods to obtain accurate and reliable results.