[S5] S5 先進ナノ構造解析に基づく材料科学の新展開II(2)

14:55 〜 15:10

[S5.26] High-pressure growth of tantalum oxynitride nanowires

*GAIDA Alexander Nico^1,2, SASAKI Takuya¹, LIU Zheng³, NIWA Ken¹, HIROZAWA Masaki¹, OHSUNA Tetsu¹, HASEGAWA Masashi¹ (1. Department of Materials Physics, Nagoya University、2. Venture Business Laboratory, Nagoya University、3. National Institute of Advanced Industrial Science and Technology (AIST))

キーワード：

Tantalum oxynitride、Growth of nanowires、High-pressure synthesis

This study firstly demonstrates the growth of tantalum oxynitride nanowires in ammonium halides under high pressure and temperature (high-PT).