講演情報
[244]The impact of Mn doping on the resistance and structure change behavior of RuTe2
*李 世元1、双 逸2、安藤 大輔1、須藤 祐司1,2 (1. 東北大工、2. 東北大AIMR)
キーワード：
phase change material、chalcogenides、PCRAM
The Mn-doped RuTe2 thin films were deposited by using radio frequency magnetron sputtering method. The films were annealed at different temperatures and their physical properties were measured.