講演情報
[16a-C43-5]Atomic site occupancy of the Si dopant in κ-Ga2O3(001) studied by photoelectron holography
〇(D)YUHUA TSAI1,2, Yusuke Hashimoto3, Piero Mazzolini4,5, Parisini Antonella4, Bosi Matteo5, Seravalli Luca5, Tomohiro Matsushita3, Yoshiyuki Yamashita1,2 (1.NIMS, 2.Kyushu Univ., 3.NAIST, 4.UNIPR, 5.IMEM-CNR)
キーワード：
Ga2O3、Photoelectron spectroscopy (PES)、Photoelectron holography (PEH)
For Ga2O3, there are six crystal polymorphs of Ga2O3: α-, β-, δ-, γ-, ε-, and κ-Ga2O3. Among them, β-Ga2O3 has received the most attention due to its highest thermal stability. Recently, the orthorhombic κ-Ga2O3 has gained attention due to its large spontaneous polarization and its ferroelectricity. For κ-Ga2O3, Si is used as the dopant to control the electrical properties. There are three inequivalent Ga atomic sites in κ-Ga2O3; octahedral (Octa), pentahedral (Penta), and tetrahedral (Tetra). Therefore, in order to control the electrical properties, the atomic structure of active dopant site in Si-doped κ-Ga2O3 should be clarified. In the present study, we investigated atomic positions and the chemical states of the Si dopants for Si-doped κ-Ga2O3 using photoelectron spectroscopy (PES) and photoelectron holography (PEH).
The Si-doped κ-Ga2O3 epitaxial layers were grown on a c-plane sapphire substrates prepared by the MOVPE method. The PEH measurements were performed at the BL25SU beamline of SPring-8.
By comparing the experimental and the simulated PEHs, the Si dopant site is attributed to the mixture of the Octa, Penta, and Tetra SiGa sites. The ratios for the Tetra, Penta, and Octa SiGa sites are estimated to be 51.0%, 35.2%, and 13.8%, respectively. The more detailed discussions will be performed in our presentation.
The Si-doped κ-Ga2O3 epitaxial layers were grown on a c-plane sapphire substrates prepared by the MOVPE method. The PEH measurements were performed at the BL25SU beamline of SPring-8.
By comparing the experimental and the simulated PEHs, the Si dopant site is attributed to the mixture of the Octa, Penta, and Tetra SiGa sites. The ratios for the Tetra, Penta, and Octa SiGa sites are estimated to be 51.0%, 35.2%, and 13.8%, respectively. The more detailed discussions will be performed in our presentation.
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