[16p-A25-1~16] 3.14 シリコンフォトニクス・集積フォトニクス

14:00 〜 14:15奨励賞エントリー英語発表

[16p-A25-3] Investigation of Linear Electro-optic Effect in Ferroelectric Hafnium Zirconium Oxide
on SiN Waveguide

〇(M1)Dhruv Ishan Bhardwaj¹, Kazuma Taki¹, Naoki Sekine¹, Kouhei Watanabe¹, Yuto Miyatake¹, Tomohiro Akazawa¹, Hiroya Sakumoto¹, Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.The Univ. Tokyo)

キーワード：

Linear Electro-optic Effect、Ferroelectric Hafnium Zirconium Oxide

The integration of programmable photonic integrated circuits (PICs) in modern technology necessitates the use of materials that support reconfigurable optical phase shifters compatible with CMOS processes. While Barium Titanate (BaTiO3) demonstrates an excellent linear electro-optic (EO) effect, its incompatibility with CMOS fabrication limits its large-scale application. This study explores the potential of hafnium zirconium oxide (HZO), a CMOS-compatible ferroelectric material, for use in optical phase shifters. We fabricated an asymmetric Mach-Zehnder interferometer (AMZI) on a silicon nitride (SiN) waveguide and investigated the linear EO effect of HZO deposited on this waveguide. The device demonstrated a non-volatile optical phase shift and a notable change in the refractive index, indicating the presence of a linear EO effect. Our findings suggest an effective Pockels coefficient of approximately 0.64 pm/V for HZO, with potential for further improvement through optimized poling conditions. This research underscores the viability of HZO as a promising material for future programmable PICs.