講演情報
[16p-C41-11]Performance Optimization of Ge: Sn (1:1) Perovskite Solar Cells Using Doping Engineering
〇(PC)Ajay Kumar Baranwal1, Qing Shen1, Shuzi Hayase1 (1.Electro-Comm. Univ.)
キーワード：
Ge/Sn 1:1、DMSO-free、Solution method
Lead-free materials are rigorously explored as substitutes for environmentally friendly photo-harvesting applications. Germanium (Ge) as a replacement of lead forms perovskite structure with promising theoretical optoelectronic results. However, its practical application is hindered by low octahedral factor values (≈0.33). Conversely, tin (Sn) has demonstrated exemplary experimental and theoretical results as a lead replacement. In this study, we fabricated a Ge: Sn/1:1 perovskite film with an improved octahedral factor ≈of 0.43, to harness the excellent optoelectronic properties of Ge-Sn alloyed film.
As a first step, we devised a dimethyl sulfoxide (DMSO) free solvent system, as DMSO rapidly oxidizes GeI2 and SnI2. X-ray diffraction pattern, UV-vis spectra, and photo yield spectra measurements confirmed the successful formation of Ge-Sn (1:1) crystal.
However, the photoelectric performance was limited due to the poor solubility of GeI2. To address this, in the next step, an additive engineering was followed which enhanced the solubility of GeI2 and reduced the nonradiative recombination.
As a first step, we devised a dimethyl sulfoxide (DMSO) free solvent system, as DMSO rapidly oxidizes GeI2 and SnI2. X-ray diffraction pattern, UV-vis spectra, and photo yield spectra measurements confirmed the successful formation of Ge-Sn (1:1) crystal.
However, the photoelectric performance was limited due to the poor solubility of GeI2. To address this, in the next step, an additive engineering was followed which enhanced the solubility of GeI2 and reduced the nonradiative recombination.
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