[17a-A35-1~9] 4.5 Nanocarbon and 2D Materials

11:45 〜 12:00英語発表

[17a-A35-9] Structural and Electrical Properties of Millimeter Scale CVD Graphene

〇(P)Sengottaiyan Chinnasamy¹, Kazunori Hirosawa¹, Yuta Kurachi¹, Masanori Hara¹, Masamichi Yoshimura¹ (1.Toyota Tech. Inst.)

キーワード：

Graphene、Raman、AFM

Despite the large single-crystal graphene is highly desired and important for the applications of graphene in electronics, it is still a challenge to precisely control the nucleation site of graphene to develop wafer-scale high-quality graphene. Herein, we synthesized millimeter-scale high-quality graphene on Cu-foil by chemical vapor deposition (CVD). To synthesize graphene, a copper foil was annealed in Ar and H₂ atmosphere to remove impurities and increase grain size. Then, methane (CH₄) was introduced at 1035 °C for 200 min to grow high-quality graphenes on the copper surface (Figure a). Graphene was transferred from Cu-foil to SiO₂/Si substrate by the bubble transfer method (Figure b). The synthesized graphenes before and after transfer are studied for structural and electrical properties by AFM (Figure c) and Kelvin probe force microscope (Figure d). The Raman spectra specify the quality and defects structure in the graphene lattice, while energy dispersive spectroscopy shows oxidation on the graphene/Cu surface. Investigate a deeper understanding of the structural and electrical properties of hexagon graphene structure to meet future developments in the research relevant to the scalable growth of high-quality graphene.