講演情報
[17p-A35-1]4H-SiC epitaxial radiation detectors for harsh environments
〇Krishna C. Mandal1 (1. University of South Carolina)
キーワード：
semiconductor、radiation detection、epitaxial 4H-SiC
The 4H Silicon Carbide polytype has emerged as an outstanding material for semiconductor radiation detectors, particularly in harsh environments, due to its wide bandgap (3.27 eV), high thermal conductivity, mechanical robustness, and radiation hardness. Schottky barrier detectors (SBDs) fabricated on 4H-SiC epitaxial layers are recognized for their excellent performance in charged particle detection, rivaling silicon detectors. Pulse height spectrum (PHS) obtained using our Ni/4H-SiC (20 μm thick epilayer) SBD exposed to a Am-241 test source, demonstrated excellent energy resolution for 5486 keV alpha particles. However, the applications in detecting ionizing radiation such as gamma (γ) photons and fast neutrons has been limited by the thinness and low active volumes of available 4H-SiC epitaxial layers. For effective detection of X-/γ-photons and fast neutrons, a larger active volume is essential. This presentation will review various findings, comparing the radiation response of vertical MOS devices with various high-κ interfacial oxides and SiO2 layers.The potential as high-resolution and high-efficiency semiconductor radiation detectors for ionizing radiation detection applications will be discussed offering promising advancements in radiation detection technology.
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