[17p-C301-1~11] 9.4 熱電変換

13:45 〜 14:00英語発表

[17p-C301-2] Effects of Annealing on the Stability and Thermoelectric Properties of Li-doped Mg₂Sn Epitaxial Films

〇(DC)Kenneth Magallon Senados^1,2, Takashi Aizawa², Isao Ohkubo², Takeaki Sakurai¹, Takao Mori^1,2 (1.Tsukuba Uni., 2.NIMS)

キーワード：

thermoelectrics、epitaxial thin films、molecular beam epitaxy

We investigated the effects of annealing on the thermoelectric (TE) properties of Li-doped Mg₂Sn epitaxial films, aimed at enhancing their application in Internet of Things (IoT) devices. Previous studies identified instability in the Seebeck coefficient and electrical conductivity after cyclic measurements. To address this, we annealed the films at 473 K. Post-annealing, we observed a shift in the carrier scattering mechanism from ionized impurity scattering to acoustic phonon scattering. This shift led to reduced defect and impurity levels, confirmed by XRD analysis. Our findings highlight the significant impact of annealing on improving the stability and performance of Li-doped Mg₂Sn films for TE applications.