[18a-P04-1~6] 3.12 半導体光デバイス

英語発表

[18a-P04-1] Analysis of 4.1μm Quantum Cascade Lasers using Si/CaF2 Heterostructures on SOI Substrate

〇(D)Zhiyuan Fan¹, Hyuma Suzuki¹, Haibo Wang¹, Masahiro Watanabe¹ (1.TokyoTech Inst.)

キーワード：

Quantum cascade laser、Heterostructures

Silicon lasers for optical integrated device applications on silicon substrates have long been a challenge to realize due to the indirect band gap. Quantum Cascade Laser (QCL) scheme based on intersubband transition is a promising candidate for light amplification device principle even using indirect band gap material such as Si. Recently, we have proposed QCL using Si/CaF2 heterostructures targeting near- and mid-infrared light emitting devices with potential possibility of integration of Si-LSI technology. In this research, we use Si as quantum-wells (QWs) and Calcium fluoride (CaF2) as barriers in active layers. CaF2 is known to be a low optical loss material for wide range from midinfrared to extreme ultraviolet wavelength region, it has been widely used for low optical loss components, and its lattice has low mismatch with Si (+0.6%), therefore, it can be well integrated in Si based heterostructure devices. In our previous work, we have demonstrated electroluminescence of 1.7 μm, 1.2 μm and light propagation in waveguides using Si/CaF2 QWs. In this work we have proposed and analyzed a midinfrared QCL structure with λ = 4.1 μm using Si/CaF2 QWs with injection layers composed of the sequence of the ground states of Si-QWs, which is important for high efficiency injection and low operation voltage