[18p-B2-1~15] 4.6 Terahertz Photonics

15:00 〜 15:15奨励賞エントリー英語発表

[18p-B2-6] Study of c- and m-plane properties of ZnO via terahertz time-domain ellipsometry

〇(D)Zixi Zhao¹, Verdad C. Agulto¹, Toshiyuki Iwamoto^1,2, Kosaku Kato¹, Kohei Yamanoi¹, Toshihiko Shimizu¹, Nobuhiko Sarukura¹, Takashi Fujii^2,3, Tsuguo Fukuda⁴, Masashi Yoshimura¹, Makoto Nakajima¹ (1.ILE, Osaka Univ., 2.PNP, 3.Ritsumeikan Univ., 4.Fukuda Crystal Lab.)

キーワード：

semiconductor characterization、terahertz、zinc oxide

In order to demonstrate the application of terahertz time-domain ellipsometry (THz-TDE) in the characterization of anisotropic semiconductors, we studied two zinc oxide (ZnO) single crystals with different orientations. The optical properties such as the refractive index of ZnO samples are obtained by ellipsometric parameters, while the electrical properties of ZnO samples are well deduced and fitted using the Drude model. These results suggest that THz-TDE can effectively obtain the optical and electrical properties of anisotropic semiconductors and can be used to characterize semiconductors with carrier densities higher than 10¹⁶ cm^-3.