[18p-D61-1~21] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

13:45 〜 14:00奨励賞エントリー英語発表

[18p-D61-4] Interlayer electron transfer from WS₂ monolayers to III–V semiconductor substrates enhanced by surface treatments

〇Takeshi Odagawa¹, Sota Yamamoto¹, Chaoliang Zhang¹, Kazuki Koyama¹, Jun Ishihara¹, Giacomo Mariani², Yoji Kunihashi², Haruki Sanada², Junsaku Nitta^1,2, Makoto Kohda^1,3,4 (1.Grad. Sch. Eng., Tohoku Univ., 2.NTT Basic Research Laboratories, 3.CSIS, Tohoku Univ., 4.QST)

キーワード：

semiconductor

Van der Waals heterostructures based on two-dimensional (2D) and three-dimensional (3D) semiconductors are among promising platforms for optoelectronics. In 2D/3D semiconductor heterostructures, the transfer of charge, spin and valley currents between 2D and 3D semiconductors, which can be modified by controlling the surface of 3D semiconductors, is critical to device operation. In this work, using heterostructures based on 2D WS₂ monolayers and 3D III–V semiconductors, we present a study on the effect of surface treatments for the 3D III–V semiconductor on the optoelectrical properties of the 2D WS₂ monolayers. Through polarization-resolved photoluminescence measurements, we reveal that the removal of native oxides from the III–V semiconductor surface or the passivation of the surface dangling bonds enhance the static electron transfer from the WS₂ monolayers to the III–V semiconductors. This opens a novel approach to control the carrier density of 2D materials and facilitate the interlayer transfer of charge, spin and valley currents.