講演情報
[18p-D61-4]Interlayer electron transfer from WS2 monolayers to III–V semiconductor substrates enhanced by surface treatments
〇Takeshi Odagawa1, Sota Yamamoto1, Chaoliang Zhang1, Kazuki Koyama1, Jun Ishihara1, Giacomo Mariani2, Yoji Kunihashi2, Haruki Sanada2, Junsaku Nitta1,2, Makoto Kohda1,3,4 (1.Grad. Sch. Eng., Tohoku Univ., 2.NTT Basic Research Laboratories, 3.CSIS, Tohoku Univ., 4.QST)
キーワード：
semiconductor
Van der Waals heterostructures based on two-dimensional (2D) and three-dimensional (3D) semiconductors are among promising platforms for optoelectronics. In 2D/3D semiconductor heterostructures, the transfer of charge, spin and valley currents between 2D and 3D semiconductors, which can be modified by controlling the surface of 3D semiconductors, is critical to device operation. In this work, using heterostructures based on 2D WS2 monolayers and 3D III–V semiconductors, we present a study on the effect of surface treatments for the 3D III–V semiconductor on the optoelectrical properties of the 2D WS2 monolayers. Through polarization-resolved photoluminescence measurements, we reveal that the removal of native oxides from the III–V semiconductor surface or the passivation of the surface dangling bonds enhance the static electron transfer from the WS2 monolayers to the III–V semiconductors. This opens a novel approach to control the carrier density of 2D materials and facilitate the interlayer transfer of charge, spin and valley currents.
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