[18p-D61-1~21] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

15:00 〜 15:15奨励賞エントリー英語発表

[18p-D61-8] Electron spin dynamics in dilute nitride InGaAsN quantum dots grown at different temperatures

〇Ayano Morita¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.Hokkaido Univ.)

キーワード：

InGaAsN、quantum dot、spin dynamics

III-V compound semiconductor quantum dots have attracted attention as active layers in spin-emitting devices, but there are two problems: a decrease in luminescence intensity at room temperature and an improvement in circular polarization. The applicant has achieved high photoluminescence intensity at room temperature using dilute nitride InGaAsN quantum dots. In this study, InGaAsN quantum dots were grown at low temperatures to induce spin filtering defects in order to achieve high circularly polarized emission, resulting in an increase in the circularly polarized decay time at room temperature and a significant improvement in circular polarization.