[18p-P10-1~2] 15.5 IV族結晶，IV-IV族混晶

英語発表

[18p-P10-2] Molecular Beam Deposition for the Synthesis of Germanium Sulfide Crystals: Exploring Optimal Growth Conditions

〇(M1)Bowen MA^1,2, Qinqiang ZHANG¹, Ryo MATSUMURA¹, Naoki FUKATA^1,2 (1.NIMS, 2.Univ. of Tsukuba)

キーワード：

GeS、Crystal growth

Germanium sulfide (GeS_x), as a layered semiconductor material, has attracted considerable attention due to its potential applications in optoelectronics, electronic devices, and energy storage^[1]. There have been reports on the synthesis methods for GeS crystals, including Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) ^[2,3]. Here, we propose to employ Molecular Beam Deposition technology for the synthesis of GeS_x crystals.