[19a-D63-1~9] 9.3 ナノエレクトロニクス

11:00 〜 11:15奨励賞エントリー英語発表

[19a-D63-8] AC Signal Sensing 6 Orders of Magnitude above Cutoff Frequency in Non-equilibrium DRAM

〇(P)Chloe Salhani¹, Kensaku Chida¹, Toshiaki Hayashi¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

キーワード：

high-frequency、Single-electron、counting statistics

The development of information technology increasingly requires the use of high-frequency signals, as one of the important factors that enable handling vast amounts of data. High-frequency operation is often limited by mechanical constraints such as the device's cutoff frequency, beyond which signals are no longer detected. In this study, we operate a nanoscale dynamic random-access memory (DRAM) device as an AC signal detector. In the DRAM, single electrons shuttle between a nanometer-scale dot (the node) and an electron reservoir (ER). Single-electron counting statistics yield information on the thermodynamic properties of the system. The addition of an AC signal on the ER induces a state of non-equilibrium between the node and the ER, a change that reflects on the counting statistics of the system. In this manner, the operation of the DRAM in the non-equilibrium regime allows the detection of AC signals up to six orders of magnitude beyond its internal cutoff frequency.