[19p-P06-1~50] 10 スピントロニクス・マグネティクス（ポスター）

英語発表

[19p-P06-18] Manipulation of the interfacial Dzyaloshinskii-Moriya interaction via the ionic gate voltage adaptation

〇(D)Cho Jaeyong¹, Lee Soobeom^1,2, Kim Dongryul¹, You Chun-Yeol¹ (1.Department of Physics and Chemistry, DGIST, 2.Basic Science Research Center, DGIST)

キーワード：

Ionic gating、interfacial Dzyaloshinskii-Moriya interaction、Perpendicular magnetic anisotropy

Changing the properties of magnetic materials through electrical methods has long been of interest to spintronics. Among them, ionic gating technique using electrolytes, which are non-conducting materials in the form of molten salts, have attracted much attention because they can create a structure with a large capacitance on the surface of the material through a structure called an electric double layer (EDL). Much effort has been made to modulate the magnetic properties of various magnetic layers using EDL. We focus on electrical modulation of the interfacial Dzyaloshinskii-Moriya interaction (iDMI), which is the asymmetric interaction between neighboring spins. The change of iDMI could affect various topological magnetic structures affected by iDMI, such as domain wall motion with chirality or the formation of skyrmions.
We utilize a trilayer structure of perpendicularly magnetized Pt/Co/Pt. This structure exhibits relatively small iDMI due to symmetry of the top and bottom heavy metal (HM) layers. Previously, we have observed changes in spin-orbit torque of Pt/Co/Pt trilayer through ionic gating. In this study, we investigate the change in iDMI by using ionic gating. Effective field of iDMI is evaluated by measuring shift of anomalous Hall curve with an applied in-plane magnetic field. The detail will be discussed in the presentation.