[19p-P06-1~50] 10 スピントロニクス・マグネティクス（ポスター）

英語発表

[19p-P06-40] Fabrication of nanoscale magnetoresistance devices using chiral molecules

〇Mizuki Matsuzaka¹, Ryunosuke Miyamoto¹, Kotaro Kashima¹, Takumi Ueda¹, Takashi Yamamoto¹, Kohei Sambe², Tomoyuki Akutagawa², Hideo Kaiju^1,3 (1.Keio Univ., 2.IMRAM, Tohoku Univ., 3.CSRN, Keio Univ.)

キーワード：

molecular spintronics、chiral molecules、chirality induced spin selectivity (CISS)

Molecular spintronic devices are attractive owing to the expected long spin diffusion lengths in molecules. We have successfully observed magnetoresistance (MR) effect in nanojunctions using high-mobility molecules at room temperature. Recently, chirality induced spin selectivity (CISS) effect has been observed in the chiral molecules and attractive for the application to the MR devices. In this study, we fabricate nanoscale MR devices using chiral molecules, N-(3S)-3,7-dimethyloctyl[1]benzothieno[3,2-b]benzothiophene-2-carboxyamide (S-BTBT-CONHR), and evaluate their structural, electrical and magnetic properties. Prior to fabricating the devices, we investigated the current–voltage curves of S-BTBT-CONHR by conductive atomic force microscopy (c-AFM) using CoPtCr tips. As a result, the current through a tip with down magnetization is larger than that with up magnetization. These results indicate that using S-BTBT-CONHR can lead to a large MR effect due to CISS effect in the devices.