講演情報
[20p-A34-10]Multi-frequency terahertz quasi-MIM absorber for integrating with thin-film MEMS bolometer
〇(M1)ZIHAO ZHAO1, Kazuho Harada1, Chao Li1, Isao Morohashi2, Ya Zhang1 (1.TUAT, 2.NICT)
キーワード：
THz absorber、MIM metamaterial、MEMS bolometer
Terahertz (THz) thermal detectors utilizing microelectromechanical systems (MEMS) resonators have attracted significant interests owing to their advantages of room-temperature operation, high sensitivity, rapid response, and miniaturization. In such MEMS detectors, a metallic film is typically employed as a THz absorber, but its low absorption coefficient (typically 10-20%) prevents further improvements in the optical sensitivity of MEMS detectors. An alternative, the metal-insulator-metal (MIM) metamaterial based plasmonic absorber, is promising for achieving high THz absorption. However, the MIM absorber generally features a multi-layer structure with a thickness of several micrometers, which is considerably thicker than the thin-film beam structure of MEMS detectors. It is therefore very challenging to integrate MIM absorbers with MEMS detectors.
We present a novel THz absorber with a quasi-MIM structure for improving the THz absorption coefficient of a THz bolometer based on a doubly clamped MEMS beam resonator. The quasi-MIM absorber is formed by etching the silicon substrate to create a groove structure, followed by metallic film deposition on both the etched and non-etched parts of the substrate. The silicon substrate is used as the dielectric structure instead of introducing extra dielectric materials. Consequently, this quasi-MIM structure offers a notable advantage over conventional MIM structures due to its reduced thickness, making it suitable for integration with MEMS bolometers. Simulation results have indicated that the absorber features absorption levels of up to 98%, and by composing multiple groove structures in the absorber, we have realized THz absorber of multiple absorption peaks. These results indicate that the quasi-MIM absorber is promising for realizing both narrow and broad band THz absorbers.
We present a novel THz absorber with a quasi-MIM structure for improving the THz absorption coefficient of a THz bolometer based on a doubly clamped MEMS beam resonator. The quasi-MIM absorber is formed by etching the silicon substrate to create a groove structure, followed by metallic film deposition on both the etched and non-etched parts of the substrate. The silicon substrate is used as the dielectric structure instead of introducing extra dielectric materials. Consequently, this quasi-MIM structure offers a notable advantage over conventional MIM structures due to its reduced thickness, making it suitable for integration with MEMS bolometers. Simulation results have indicated that the absorber features absorption levels of up to 98%, and by composing multiple groove structures in the absorber, we have realized THz absorber of multiple absorption peaks. These results indicate that the quasi-MIM absorber is promising for realizing both narrow and broad band THz absorbers.
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