[20p-P02-1~29] 9 応用物性（ポスター）

英語発表

[20p-P02-9] Effect of Surface damage of Si nanostructures on SiC formation

〇Pengyu ZHANG^1,2, Yonglie Sun¹, Wipakorn Jevasuwan¹, Naoki Fukata^1,2 (1.NIMS, 2.Tsukuba Univ.)

キーワード：

nanowire、nanostructure

One-dimensional (1D) nanostructures, including nanowires (NWs) and nanotubes (NTs), are promising extensions of silicon (Si) industrial products, offering large junction areas, high integration density, and significant specific surface areas. Carbon-based materials like silicon carbide (SiC) have excellent electronic properties, such as high thermal conductivity, high electron mobility, and wide bandgap, making them ideal for electronic devices. We are currently studying various coated NW structures such as Si/SiC core-shell structures and SiC nanotubes, which show great potential for high-power and high-speed electronic components.
The goal of this research is to develop high-quality, unique 1D structures through chemical vapor deposition (CVD) technology, achieving the growth of SiC on Si core-shell NW structures. Our research aims to expand the practical applications of these nanostructures in various advanced fields.