講演情報
[10p-PB3-11]Fabrication of epitaxial Fe4N membranes for inverse magnetostriction measurements
〇Huameng Yu1,2, Shoya Sakamoto2,3, Keita Ito2,4, Kota Kanda5, Junichi Shiogai5,6, Jobu Matsuno5,6, Takeshi Seki2,3,7 (1.Grad. Sch. of Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.CSIS, Tohoku Univ., 4.ASRC, JAEA, 5.Dept. of Phys., Univ. of Osaka, 6.OTRI-Spin, Univ. of Osaka, 7.SRIS, Tohoku Univ.)
キーワード：
nitride、inverse magnetostriction、membrane
Fe4N is considered a promising material for flexible spintronics because of its large magnetostriction constants and relatively high spin polarization. While direct magnetostriction in Fe4N and Co-substituted Fe4N has been reported, the inverse magnetostriction effect in single-crystalline or epitaxial Fe4N films has not been sufficiently clarified. To address this issue, freestanding Fe4N membranes were fabricated using an epitaxial lift-off technique. Fe4N thin films were grown by molecular beam epitaxy on SrTiO3 (STO)(001)/Sr3Al2O6 (SAO)/STO templates, where the water-soluble SAO layer acted as a sacrificial layer. After dissolving the SAO layer in water, the membranes were transferred onto flexible polyvinyl chloride tape for strain-dependent characterization. X-ray diffraction confirmed that the Fe4N films retained their epitaxial crystal structure after lift-off, while vibrating sample magnetometry showed that their cubic magnetocrystalline anisotropy was preserved after transfer.