講演情報
[10p-PB3-29]Optimization of W-based amorphous alloys for energy-efficient SOT-MRAM application
〇Yuki Hibino1, Tatsuya Yamamoto1, Takanori Shirokura1, Junyeon Kim1, Tomohiro Taniguchi1, Hitoshi Kubota1, Kay Yakushiji1, Shinji Yuasa1 (1.AIST)
キーワード：
nonvolatile memory、spin Hall effect、mangetic tunnel junction
Spin-orbit-torques (SOTs) enable fast and reliable magnetization switching, making it suitable for use in novel magnetoresistive random-access memory (SOT-MRAM) for cache memory application. From the perspective of low-power writing operation, the development of materials with large spin Hall effect (spin Hall material: SHM) is a key factor in the practical implementation of SOT-MRAM. Recently, we proposed amorphous tungsten(W)-based alloys as a new SHM that simultaneously satisfies not only large spin Hall effect but also high thermal tolerance and high compatibility with magnetic tunnel junction structure. In this study, we report on further enhancement of the spin Hall effect in amorphous W-based SHM and demonstrate low-power magnetization switching in three-terminal SOT-MRAM devices.