講演情報
[10p-PB3-43]Modulation of spin transport length in AlGaAs/GaAs-based two-dimensional electron gas
〇(DC)Mineto Ogawa1, Michihiko Yamanouchi1, Tetsuya Uemura1 (1.IST. Hokkaido Univ.)
キーワード：
two-dimensional electron gas、spin injection、semiconductor
Understanding of spin transport mechanism in a two-dimensional electron gas (2DEG) with high electron mobility (μn) is crucial for developing next generation spintronic devices. Recently, we demonstrated electrical spin injection into an AlGaAs/GaAs normal modulation-doped (MD) structure, and observed significant modulation of the spin-valve signals by applying bias current (Id) flowing through the 2DEG channel and a ferromagnet/semiconductor junction. In this study, we discuss the effect of an electric field (E) in the AlGaAs/GaAs 2DEG channel induced by Id on the spin transport length (Ls). In the 2DEG structure, Ls significantly increased with increasing Id. This indicates that the drift transport was dominant in the 2DEG. The higher μn of the 2DEG structure produced larger drift velocity compared with the bulk structure, resulting in the substantial modulation of Ls in the 2DEG structure.