講演情報
[11a-E208-4]Pulse-width dependence of write error rate in Mn3Sn driven by chiral spin rotation
〇(M1)Yuki Fushimi1,2, Yuma Sato1,2, Haruki Iwai1,2, Yuta Yamane1,5, Shun Kanai1,2,3,4,6,7, Shunsuke Fukami1,2,3,4,8 (1.Lab. for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Dept. Elec. Eng., Tohoku Univ., 3.CSIS, Tohoku Univ., 4.AIMR, Tohoku Univ., 5.FRIS, Tohoku Univ., 6.EFS, Tohoku Univ., 7.QST, 8.InaRIS)
キーワード：
Spintronics、Antiferromagnet、Spin-orbit torque
Antiferromagnets (AFMs) are promising for high-speed and external field-robust spintronic devices[1,2]. Among them, noncollinear AFM Mn3Sn provides an excellent platform for electrical detection and manipulation of AFM order, including readout via the anomalous Hall[3] and tunnel magnetoresistance effects[4], as well as writing through current-induced switching[5] and chiral spin rotation[6,7]. For device applications, it is essential to understand the stochastic nature of switching. Here, we investigate the dependence of the write error rate (WER) on current pulse width tpulse and current density JHM in Mn3Sn nanodots[8], and clarify the switching characteristics associated with the chiral spin rotation.
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[1] T. Jungwirth et al., Nat. Nanotechnol. 11, 231 (2016). [2] V. Baltz et al., Rev. Mod. Phys. 90, 015005 (2018). [3] S. Nakatsuji et al., Nature 527, 212 (2015). [4] X. Chen et al., Nature 613, 492 (2023). [5] H. Tsai et al., Nature 580, 608 (2020). [6] Y. Takeuchi et al., Nat. Mater. 20, 1364 (2021). [7] Y. Takeuchi et al., Science 389, 830 (2025). [8] Y. Sato et al., Appl. Phys. Lett. 122, 122404 (2023).