[11a-E208-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

10:45 〜 11:00奨励賞エントリー英語発表

[11a-E208-7] Scaling trend of cosmic-ray soft-errors in STT-MTJ MRAMs

〇Masahiro Inoue¹, Daisuke Kobayashi^1,2 (1.UTokyo, 2.JAXA)

キーワード：

STT-MTJ、MRAM、soft error

MRAMs comprising STT-MTJs (spin-transfer-torque magnetic tunnel junctions) may exhibit a SE (soft error) due to a propagation of noise current generated in Si after a cosmic-ray strike. Sensitivity to this propagation-induced SE would be evolved along with the device scaling, but its evolution remains unclear. We investigated this evolution by calculating magnetization switching in STT-MTJs in various generations with the LLG equation coupled with a double-exponential model for cosmic-ray-induced noise-currents. Results have revealed that STT-MTJs become more sensitive to noise along with the device scaling but their increased sensitivity would be canceled out by the reduction in noise current due to Si device miniaturization.