講演情報
[11a-E214-11]Phase transition with switching of magnetotransport in Cr-Te layered magnetic films
〇Shunsuke Mori1,2, Shogo Hatayama3, Keisuke Hirata1,2, Takamasa Hirai1,2, Shun-ichi Takano1,2, Fuyuki Ando2, Yusuke Nakanishi1,2, Ken-ichi Uchida1,2 (1.UTokyo, 2.NIMS, 3.SFRC AIST)
キーワード：
Transition metal telluride thin film、Phase transition、Magnetotransport properties
Magnetic van der Waals (vdW) crystals have recently attracted considerable attention as a new class of low-dimensional magnet for next-generation spintronic applications. Among a variety of these materials, chromium ditelluride system (Cr1+δTe2), where δ is ranging from 0 to 1, forms different compositional phases with a series of self-intercalated structures. With an increase in Cr content, Cr atoms are intercalated in a vdW gap with structural transition, where their magnetic properties are dramatically tuned. Such tunability of Cr1+δTe2 phases is one of potential interests to design functional layered magnetic films.
In this work, we investigated phase controllability and switching in physical properties of CrTe (δ = 1) thin films deposited via a sputtering method. X-ray diffraction and transmission electron microscopy indicate a phase transition from a monoclinic symmetry to a hexagonal symmetry via post-annealing process. Magnetic hysteresis curves at 50 K reveal that the as-deposited film exhibits larger magnetization than the post-annealed film, whereas the post-annealed film shows higher coercive field. Temperature dependence of magnetization indicates that TC of the as-deposited film is much higher than the post-annealed film, ensuring clear contrasts of magnetic properties. Moreover, the signs of anomalous Hall coefficients are clearly modulated via this phase transition. These results indicate that phase transitions of CrTe accompanying by modulations of intercalated atomic structures are promising pathways to develop reconfigurable spintronic functionalities through applications of magnetic vdW crystals.
In this work, we investigated phase controllability and switching in physical properties of CrTe (δ = 1) thin films deposited via a sputtering method. X-ray diffraction and transmission electron microscopy indicate a phase transition from a monoclinic symmetry to a hexagonal symmetry via post-annealing process. Magnetic hysteresis curves at 50 K reveal that the as-deposited film exhibits larger magnetization than the post-annealed film, whereas the post-annealed film shows higher coercive field. Temperature dependence of magnetization indicates that TC of the as-deposited film is much higher than the post-annealed film, ensuring clear contrasts of magnetic properties. Moreover, the signs of anomalous Hall coefficients are clearly modulated via this phase transition. These results indicate that phase transitions of CrTe accompanying by modulations of intercalated atomic structures are promising pathways to develop reconfigurable spintronic functionalities through applications of magnetic vdW crystals.