講演情報
[8a-E207-5]Orbital Hall effect and orbital relaxation in Mn thin films with variable disorder
〇Mingu Kang1,2,3, Federica Nasr1, Santos Alvarado1, Pietro Gambardella1 (1.Dept. of Materials, ETH Zurich, 8093 Zurich, Switzerland, 2.FRIS, Tohoku Univ., Sendai 980-8578, Japan, 3.RIEC, Tohoku Univ., Sendai 980-8577, Japan)
キーワード：
Orbital Hall effect、Orbital relaxation、Disordered metal
Orbital angular momentum (OAM) driven by electric fields has recently attracted attention as an additional information carrier in solid-state systems, extending the scope of conventional spin-based functionalities. However, the behavior of orbital transport and relaxation in materials spanning different degrees of structural disorder remains largely unexplored. In this work, we systematically investigate the orbital Hall effect (OHE) and orbital relaxation in Mn thin films ranging from strongly disordered to single-crystalline a-Mn. Employing orbital Hanle magnetoresistance as an experimental probe, we observe clear orbital responses across all structural phases. The orbital Hall signal exhibits a systematic dependence on charge transport properties, suggesting a robust orbital response even in poorly ordered systems. In addition, the orbital relaxation behavior shows a pronounced sensitivity to both structural order and temperature, indicating the presence of multiple relaxation pathways. These results highlight the resilience of orbital degrees of freedom against disorder and provide general insights into orbital relaxation in metallic systems with varying levels of crystallinity.