講演情報
[8a-E207-8]Epitaxial growth and superconducting properties of Al / ferromagnetic semiconductor (In,Fe)As thin film heterostructures
〇Hirotaka Hara1, Keita Ishihara1, Masaaki Tanaka1,2,3, Le Duc Anh1,2 (1.EEIS, Univ. of Tokyo, 2.CSRN, Univ. of Tokyo, 3.Nano Quine, Univ. of Tokyo)
キーワード：
ferromagnetic semiconductor、superconductivity、proximity effect
Superconductor/ferromagnet heterostructures provide a versatile platform for exploring spin-dependent superconducting phenomena arising from interfacial proximity effects. In this study, we investigate the molecular beam epitaxy growth of 20-nm-thick Al films on Fe-doped FMS (In,Fe)As layers subjected to different compressive strains. X-ray diffraction and transmission electron microscopy revealed the epitaxial growth of single-crystalline Al layers, with the growth orientation changing from [110] to [111] as the in-plane lattice constant of (In,Fe)As increases. The superconducting critical temperature of Al was found to vary systematically with the film surface morphology and grain size. In addition, the critical magnetic field of Al decreases below 0.5 K. This unconventional behavior likely reflects the magnetic coupling to the underlying FMS (In,Fe)As layer. These findings highlight epitaxial Al/(In,Fe)As heterostructures as a promising platform for investigating proximity-induced superconducting and magnetic phenomena in semiconductor-based hybrid quantum devices.