講演情報
[8p-E207-17]Magnetic proximity effect in graphene/Fe3GeTe2 van der Waalsheterostructures revealed by anomalous Hall transport
〇Motomi Aoki1,2, Joaquin Medina Duenas1,3, Thomas Guillet1, Victor Zatko1, Kenji Watanabe4, Takashi Taniguchi5, Jose H. Garcia1, Juan F. Sierra1, Masashi Shiraishi6,7, Stephan Roche1,8, Sergio O. Valenzuela1,8 (1.ICN2, 2.ISSP-UTokyo, 3.UAB, 4.RCEOM-NIMS, 5.MANA-NIMS, 6.Kyoto Univ., 7.CSRN-Kyoto Univ., 8.ICREA)
キーワード：
Graphehe、van der Waals Materials、Proximity effect
Van der Waals heterostructures combining graphene with two-dimensional ferromagnets offer apromising platform for exploring the magnetic proximity effect (MPE). However, detecting MPE atgraphene-metallic ferromagnet interfaces has been challenging because the high conductivity of themetallic layers leads to significant current shunting, which masks the subtle proximity-induced signals inthe graphene layer.Here we address this challenge using monolayer graphene/Fe3GeTe2 (FGT) heterostructures. The core evidence for the MPE is derived from square hysteresis in the transverse resistance and a butterfly-shaped longitudinal response with a sign reversal across graphene charge neutrality point. These features correspond to anomalous Hall responses arising from FGT magnetism. However,a standard parallel-channel model, in which graphene acts only as a passive conductor, significantlyunderestimates the observed signals. This discrepancy indicates that the graphene itself acquires a magneticcharacter via the MPE, contributing its own AHE signal to total transport. Our results demonstrate thatgraphene/FGT heterostructures provide a gate-tunable platform for studying MPE even in the presence ofstrong current shunting by a metallic ferromagnet, offering a promising route toward van der Waalsspintronic devices.