講演情報
[8p-E208-14]Electrical Conductivity and Magnetoresistance of Fe3O4 with Fe3O4-Fe2O3 Interfaces
〇Atsunori Naganawa1, Kensuke Hayashi1, Satoshi Iihama1, Takahiro Moriyama1 (1.Nagoya Univ.)
キーワード：
spintronics、iron oxide、electrical conductivity
The valence state of iron ions is 2+ or 3+, which results in various crystal structures for iron oxides, such as rock salt (FeO), spinel (Fe3O4), and corundum (Fe2O3). By controlling the film growth conditions and choosing substrates for epitaxial growth, it is possible to select the crystal structure of iron oxides on sample making. We fabricated laterally segregated Fe3O4-Fe2O3 thin films on templates made with MgAl2O4 (MAO: spinel structure) seed layers and an Al2O3 (corundum structure) substrate by adjusting the substrate temperature and oxygen flow rate during the film deposition. In this study, we have investigated electrical resistivity and magnetoresistance of Fe3O4 with interfaces between Fe2O3.