[8p-N304-1~14] FS.1 フォーカストセッション「AIエレクトロニクス」

17:00 〜 17:15奨励賞エントリー英語発表

[8p-N304-11] Enhanced Reservoir Computing Performance with Staggered Polarization Switching in MFIFM HZO Capacitor

〇(D)DONGHEE LEE¹, Kasidit Toprasertpong¹, Ryosho Nakane¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

キーワード：

Reservoir computing、Ferroelectric HZO、MFIFM capacitor

This study demonstrates an MFIFM HZO capacitor for reservoir computing based on staggered polarization switching. Compared with a single-layer MFM HZO capacitor, the asymmetric MFIFM stack with two HZO layers separated by an ultrathin Al2O3 interlayer exhibits multi-peak switching current characteristics. These diverse transient responses improve the memory and nonlinear components required for reservoir computing, resulting in enhanced short-term memory and parity-check performance.